invited_speakers


Olivier Joubert CNRS LTM, France “Plasma Etching Challenges involved in Gate Stack Patterning for 45 nm technological nodes and below”	Karen Reinhardt Cameo Consulting, USA “Stripping and Cleaning: The Tenacity of Plasma Processing”	Annemie Bogaerts University of Anwerp, Belgium “Computer modeling of etch plasmas: capacitively coupled and inductively coupled rf discharges”
Vincent M. Donnelly University of Houston, USA "Selected Diagnostic Methods for Plasmas and Plasma-Surface Interactions"	Tetsuya Tatsumi Sony, Japan “Quantitative control of plasmas for low-k integration”	Deirdre L. Olynick Lawrence Berkeley National Laboratory, USA “Nanoscale Pattern Transfer for Nanoscience”

Olivier Joubert

CNRS LTM, France

“Plasma Etching Challenges involved in Gate Stack Patterning for 45 nm technological
nodes and below”

Karen Reinhardt

Cameo Consulting, USA

“Stripping and Cleaning: The Tenacity of Plasma Processing”

Annemie Bogaerts

University of Anwerp, Belgium

“Computer modeling of etch plasmas:
capacitively coupled and inductively
coupled rf discharges”

Vincent M. Donnelly

University of Houston, USA

"Selected Diagnostic Methods for Plasmas
and Plasma-Surface Interactions"

Tetsuya Tatsumi

Sony, Japan

“Quantitative control of plasmas for
low-k integration”

Deirdre L. Olynick

Lawrence Berkeley National Laboratory, USA

“Nanoscale Pattern Transfer for
Nanoscience”